unisonic technologies co., ltd ut70n03 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-269.c n-channel enhancement mode ? description the ut70n03 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) < 9m ? @ v gs =10v, i d =33a * r ds(on) < 18m ? @ v gs =4.5v, i d =20a * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UT70N03L-TM3-T ut70n03g-tm3-t to-251 g d s tube ut70n03l-tn3-t ut70n03g-tn3-t to-252 g d s tube ut70n03l-tn3-r ut70n03g-tn3-r to-252 g d s tape reel
ut70n03 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-269.c ? absolute maximum ratings (t a =25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current i d 60 a pulsed drain current i dm 195 a power dissipation p d 53 w linear derating factor 0.36 w/c junction temperature t j +150 storage temperature t stg -55 ~ +150 note: a bsolute maximum ratings are those values beyo nd which the device could be permanently damaged. a bsolute maximum ratings are stress ratings only an d functional device operat ion is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 110 /w junction to case jc 2.8 /w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 30 v drain-source leakage current i dss v ds =30v, v gs =0v 1 a gate-source leakage current i gss v gs =20v 100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1 3 v static drain-source on-resistance r ds(on) v gs =10v, i d =33a 9 m ? v gs =4.5v, i d =20a 18 forward transconductance g fs v ds =10v, i d =33a 35 s dynamic parameters input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz 1485 pf output capacitance c oss 245 pf reverse transfer capacitance c rss 170 pf switching parameters total gate charge q g v ds =20v, v gs =4.5v, i d =33a 16.5 nc gate source charge q gs 5 nc gate drain charge q gd 10.3 nc turn-on delay time t d ( on ) v gs =10v, v ds =15v, i d =33a, r d =0.45 ? , r g =3.3 ? 8.2 ns turn-on rise time t r 105 ns turn-off delay time t d ( off ) 21.4 ns turn-off fall-time t f 8.5 ns source- drain diode ratings and characteristics diode forward voltage (note 2) v sd i s =60a, v gs =0v 1.3 v maximum body-diode continuous current i s v d =v g =0v, v s =1.3v 60 a pulsed source current (body diode) i sm (note 1) 195 a note :1. pulse width limited by safe operating area. note : 2. pulse width < 300us, duty cycle < 2%.
ut70n03 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-269.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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